Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

Autor:	Ph. Galy, Johan Bourgeat, Jean Jimenez, Alexandre Dray, Christophe Entringer, Blaise Jacquier
Rok vydání:	2010
Předmět:	Engineering Electrostatic discharge Silicon business.industry Electrical engineering Thyristor chemistry.chemical_element Clamp chemistry CMOS Logic gate Ball grid array Electronic engineering Power semiconductor device business
Zdroj:	2010 IEEE International Conference on Integrated Circuit Design and Technology.
DOI:	10.1109/icicdt.2010.5510292
Popis:	The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to the technology scaling down. The main purpose of this paper is to present and compare silicon results in C45nm CMOS technology of a single pitch ESD protection using isolated Silicon Controlled Rectifier (SCR) and dual isolated SCR. These two protection structures with dynamic trigger circuit will be compared. Also, the power pad clamps in 1 pitch IO are qualified through 100ns TLP. Silicon result show that ESD robustness reaches 4kV HBM, 200V MM and 500V CDM for a 64 BGA package. IO power pads are also immune to Latch Up and power sequence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::95a59365857d5d815cc192513d00dd41 https://doi.org/10.1109/icicdt.2010.5510292 Zobrazit plný text záznamu