Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells
| Autor: | Y.A. Suaza, J. H. Marín, H.M. Baghramyan, David Laroze, M.R. Fulla |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
business.industry Polyatomic ion Binding energy General Physics and Astronomy Field effect 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Laser 01 natural sciences Molecular physics Bond-dissociation energy 0104 chemical sciences law.invention Semiconductor law Ionization Physical and Theoretical Chemistry 0210 nano-technology business Quantum well |
| Zdroj: | Chemical Physics Letters. 730:384-390 |
| ISSN: | 0009-2614 |
| DOI: | 10.1016/j.cplett.2019.06.024 |
| Popis: | D 2 + molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D 2 + total energy and the D 2 + binding energy corresponding to the second ionization process D 2 + → D + + D + + e - are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D 2 + - complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D 0 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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