Study of the Erase Mechanism of MANOS ($ \hbox{Metal/Al}_{2}\hbox{O}_{3}/\hbox{SiN/SiO}_{2}/\hbox{Si}$) Device
| Autor: | Guang-Li Luo, Chih-Yuan Lu, Ming-Jui Yang, Chia-Wei Wu, Jong-Yu Hsieh, Kuang-Yeu Hsieh, Sheng-Chih Lai, Hang-Ting Lue, Chao-Hsin Chien, Tai-Bor Wu, Erh-Kun Lai, Yan-Kai Chiou, Rich Liu |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Oxide Electrical engineering Electron Nitride Electronic Optical and Magnetic Materials Non-volatile memory Metal chemistry.chemical_compound chemistry visual_art visual_art.visual_art_medium Optoelectronics Erasure Electrical and Electronic Engineering business Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 28:643-645 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.899993 |
| Popis: | The erase characteristics and mechanism of metal- Al2O3-nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB - time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition - also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS. |
| Databáze: | OpenAIRE |
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