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We have deposited textured ZnO:Al films over large areas using a reactive-environment hollow cathode sputtering (RE-HCS) system developed in house, and have achieved excellent carrier mobilities (up to 49.5 cm 2 /Vs at a carrier concentration of 4.42 x 10 20 /cm 3 ). Both the electrical properties and optical properties (total transmission and haze) are superior to those exhibited by commercially available SnO 2 :F. Using these textured ZnO:Al films, we have achieved an a-Si:H solar cell efficiency boost of 8% relative to commercial SnO 2 :F superstrates which resulted from improvements in all three PV parameters, namely V oc , J sc , and FF. We have also determined the dependence of cell performance on the degree of haze in the ZnO:Al films. Electrical, physical, and optical properties of ZnO:Al and SnO 2 :F, as determined by four-point probe, Hall effect, SEM, AFM, ICP, transmission (total and diffuse), and work function measurements are presented and correlated to the observed differences in a-Si solar cell performance. We have also developed a refractive index matching layer that, when inserted between the TC O and the a-Si:H layers, resulted in an increase in J |
