Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
| Autor: | Takashi Ikeda, Yoshiyuki Osada, Naoki Nishimura, Yoshinobu Sekiguchi, Tadahiko Hirai, Akio Koganei, Kazuhisa Okano |
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| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 91:5246-5249 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1459605 |
| Popis: | We present here a magnetic tunnel junction device using perpendicular magnetization films designed for magnetic random access memory (MRAM). In order to achieve high-density MRAM, magnetic tunnel junction devices with a small area of low aspect ratio (length/width) is required. However, all MRAMs reported so far consist of in-plane magnetization films, which require an aspect ratio of 2 or more in order to reduce magnetization curling at the edge. Meanwhile, a perpendicular magnetic tunnel junction (pMTJ) can achieve an aspect ratio=1 because the low saturation magnetization does not cause magnetization curling. Magnetic-force microscope shows that stable and uniform magnetization states were observed in 0.3 μm×0.3 μm perpendicular magnetization film fabricated by focused-ion beam. In contrast, in-plane magnetization films clearly show the presence of magnetization vortices at 0.5 μm×0.5 μm, which show the impossibility of information storage. The PMTJ shows a magnetoresistive (MR) ratio larger than 50% w... |
| Databáze: | OpenAIRE |
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