Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

Autor:	A.A. Dakhel, Y. Ali-Mohamed Ahmed
Rok vydání:	2005
Předmět:	Materials science Silicon Analytical chemistry chemistry.chemical_element Mineralogy General Chemistry Dielectric Condensed Matter Physics Amorphous solid Nickel chemistry Vacuum deposition Electrical resistivity and conductivity General Materials Science Thin film Surface states
Zdroj:	Journal of Physics and Chemistry of Solids. 66:1080-1084
ISSN:	0022-3697
DOI:	10.1016/j.jpcs.2005.02.006
Popis:	Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG) 2 ] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG) 2 /Si(P) metal-insulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density D it of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG) 2 -Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9582ebf0e6d80f4cbb3f31fb225c095d https://doi.org/10.1016/j.jpcs.2005.02.006 Zobrazit plný text záznamu Full Text from ScienceDirect