Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAs

Autor:	R. Langfeld, A. G. Nassibian, J. Würfl, C. Maurer, H. L. Hartnagel
Rok vydání:	1989
Předmět:	Materials science Contact resistance Doping Electronic engineering Analytical chemistry Cathode ray Electrical and Electronic Engineering Ohmic contact Ion
Zdroj:	International Journal of Electronics. 66:213-225
ISSN:	1362-3060 0020-7217
DOI:	10.1080/00207218908925378
Popis:	Detailed analysis of electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au ohmic contacts is reported. Lower contact resistance values with better reproducibility and much lower standard deviation are achieved with Ni doped TLM devices. Ar+ ion X-ray photoelectron depth profiling was used to relate the distribution of Ge, Ni, W, Si, Au, Ga and O to the electrical properties of contacts. Ohmic behaviour was found probably to be dependent upon the Ge and Ni compound formation on the GaAs surface.
Databáze:	OpenAIRE
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