Silicon-on-insulator power integrated circuits

Autor:	D.M. Garner, G. Ensell, A. Popescu, Kuang Sheng, William I. Milne, Florin Udrea, H.T Lim
Rok vydání:	2001
Předmět:	LDMOS Engineering business.industry General Engineering Electrical engineering Silicon on insulator Insulated-gate bipolar transistor Integrated circuit law.invention CMOS law MOSFET Optoelectronics Breakdown voltage Power semiconductor device business
Zdroj:	Microelectronics Journal. 32:517-526
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(01)00024-6
Popis:	A power integrated circuit process has been developed, based on silicon-on-insulator, which allows intelligent CMOS control circuitry to be placed alongside integrated high-voltage power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 μm thickness together with a buried oxide layer of 3 μm thickness. The respective LDMOS specific on-resistance and LIGBT on-state voltage for this breakdown voltage were 148 mΩ cm2 and 3.9 V, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::956b687a5ed479a803221d91d3f33f09 https://doi.org/10.1016/s0026-2692(01)00024-6 Zobrazit plný text záznamu Full Text from ScienceDirect