Performance of tri-gate AlGaN/GaN HEMTs
| Autor: | Erdin Ture, Ralf Granzner, Frank Schwierz, Ruediger Quay, Oliver Ambacher, Mohamed Alsharef |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 020206 networking & telecommunications Algan gan Gallium nitride 02 engineering and technology High-electron-mobility transistor 01 natural sciences Threshold voltage chemistry.chemical_compound Planar chemistry Logic gate 0103 physical sciences Limit (music) 0202 electrical engineering electronic engineering information engineering Optoelectronics business Voltage |
| Zdroj: | ESSDERC |
| DOI: | 10.1109/essderc.2016.7599615 |
| Popis: | The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar counterpart. Moreover, the RF performance of tri-gate HEMTs with optimized body design can be superior to that of conventional planar devices. |
| Databáze: | OpenAIRE |
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