Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devices
| Autor: | Z. Calahorra, Yoram Shapira, J. Bregman, R. Goshen |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Auger electron spectroscopy
Materials science business.industry Metals and Alloys Analytical chemistry Oxide chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal chemistry.chemical_compound Semiconductor chemistry Chemical bond visual_art Materials Chemistry visual_art.visual_art_medium business Layer (electronics) Indium |
| Zdroj: | Thin Solid Films. 125:347-353 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(85)90243-3 |
| Popis: | We studied and compared InSb oxides, grown by plasma and anodic processes, using capacitance-voltage measurements and high resolution Auger electron spectroscopy (AES). We developed a method for analysing the AES line shapes, peak positions and ratios of the various elements as a function of depth in the oxides. The analyses provide detailed new information on the oxide layer structure and composition ( e.g. interface widths and boundaries) and on changes in the chemical bonding. On the basis of investigations of a large number of samples, we find that the two oxidation processes produce similar films comprising mixed oxides with a defined In 2 O 3 -to-Sb 2 O 3 ratio of 1:3. The In 2 O 3 In and Sb 2 O 3 Sb interfaces overlap but do not coincide, with the former usually being wider and closer to the substrate than the latter. This partial overlap indicates a distinct antimony-rich indium oxide interface which may dominate the electronic properties of the metal/ oxide/semiconductor structures. The AES characteristics are in turn related to the observed electronic properties. |
| Databáze: | OpenAIRE |
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