Layer-resolved depth profiling at single crystal surfaces

Autor:	Torgny Gustafsson, B. W. Busch, W. H. Schulte, Christian Uebing
Rok vydání:	2001
Předmět:	Nuclear and High Energy Physics Materials science Scattering Alloy Stopping power engineering.material Spectral line Ion engineering Impact parameter Atomic physics Instrumentation Layer (electronics) Single crystal
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 183:88-96
ISSN:	0168-583X
Popis:	The stopping power and straggling of ions in channeling and blocking directions depend on multiple scattering and impact parameter dependent effects. Therefore, the extraction of high-resolution depth profiles of single crystals based on simulation of the energy spectra obtained from medium-energy ion scattering (MEIS) is not straightforward. An alternative is to analyze the MEIS angular (blocking) scattering yields from several angular configurations. We have applied this technique to obtain layer-resolved depth profiles in a dilute substitutional alloy, Fe-9 wt% W (1 0 0), and in an alloy with a small mass difference between the base metals, Fe-15 wt% Cr (1 0 0). As a result, layer-resolved depth profiling combined with conventional MEIS structural analysis allowed a detailed study of surface segregation phenomena in these systems.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9561c8b4fa8c69898b8488638914fc42 https://doi.org/10.1016/s0168-583x(01)00572-9 Zobrazit plný text záznamu Full Text from ScienceDirect