Epitaxial growth of InSb films by r.f. magnetron sputtering
| Autor: | Mistuo Kunugi, Takayuki Miyazaki, Youichi Kitamura, Sadao Adachi |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Indium antimonide Metals and Alloys Analytical chemistry Surfaces and Interfaces Sputter deposition Epitaxy Cathode Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Sputtering Ellipsometry law Materials Chemistry Sapphire Diode |
| Zdroj: | Thin Solid Films. 287:51-56 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(96)08738-x |
| Popis: | The difference in the operational properties between r.f. conventional diode (CD) and planar magnetron (PM) sputterings has been studied. The PM mode of operation is obtained by setting a circular permanent magnet on a copper plate back of the target electrode in the CD apparatus. The direct-current self-bias potential generated at the cathode for the PM mode of operation is found to be about an order smaller than that for the CD mode. InSb epitaxial films have been grown on (0001) sapphire substrates by the CD and PM modes of operation. The deposition rate for the PM mode of operation is about an order larger than that for the CD mode. Spectroscopic-ellipsometry and atomic force microscopy data are presented to show that the PM-deposited InSb film has a relatively gentle, terraced surface while the CD-deposited film has a roughened surface with the emergence of deep hollows. It is also found that the Hall mobility in the PM-deposited film is considerably higher than that in the CD-deposited one. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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