Pulsed laser annealing for advanced technology nodes: Modeling and calibration
| Autor: | Karim Huet, Benoit Curvers, A. La Magna, Christophe Licitra, Fulvio Mazzamuto, S.F. Lombardo, A. Sciuto, Joris Aubin, Armand Verstraete, P.-E. Raynal, Sebastien Kerdiles, P. Acosta-Alba, J.M. Hartmann, Bobby Lespinasse, L. Dagault |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Annealing (metallurgy) General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Nanosecond 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal diffusivity Laser 01 natural sciences Engineering physics 0104 chemical sciences Surfaces Coatings and Films Silicon-germanium law.invention Front and back ends chemistry.chemical_compound Strain engineering chemistry law Thermal 0210 nano-technology |
| Zdroj: | Applied Surface Science. 505:144470 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2019.144470 |
| Popis: | Pulsed laser annealing is one of the promising low thermal budget approaches to overcome process limitations and develop alternative schemes to achieve better device performance and enable 3D architectures. Its applications range from the Front End Of the Line (doping, contacts, strain engineering) to Back End Of the Line (Cu grain engineering) in logic and memory devices. One key enabler for integrating this disruptive technology in the coming highly challenging technology nodes is an accurate time-resolved modeling of laser matter interaction, thermal diffusion, phase change and species diffusion at the nanosecond timescale, all to be solved self-consistently. In this paper, we will present the TCAD simulation package of the laser annealing process (LASSE Innovation Application Booster or LIAB), with a specific focus on the phase field model and calibration of relevant materials. The coupled partial differential equation system is described and a methodology for materials calibration, especially challenging in the melting regime, is detailed with results shown for Ge and SiGe, with a application on a typical p-type finFET contact region anneal 2D use case. |
| Databáze: | OpenAIRE |
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