High-speed photocathode gating for generation III image intensifier applications

Autor: Michael R. Saldana, Joseph P. Estrera
Rok vydání: 2003
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.487589
Popis: Generation III image intensifiers, employing gallium arsenide (GaAs)photocathodes, enable high speed gating into sub-nanosecond range. By utilizing high speed gating techniques, a number of important applications are realized in military rugged ground and aviation applications. Recent advancements toward size, weight, and power reduction of gated I2-based systems have have expanded the scope of applicability of these gating techniques into the battery-powered portable platforms. We present a survey of applications that are expanding from military to commercial applications as high speed gated power supply advancements are realized in the industry.
Databáze: OpenAIRE