Asymmetric strain distributions resulting from deliberately induced misfit dislocations

Autor:	C. G. Tuppen, C. J. Gibbings, M. A. G. Halliwell, M. Hockly
Rok vydání:	1990
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Strain (chemistry) Condensed matter physics media_common.quotation_subject chemistry.chemical_element Crystal structure Epitaxy Asymmetry Crystallography chemistry Strain distribution Dislocation media_common Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 56:140-142
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.103054
Popis:	Misfit dislocations oriented in a specific 〈110〉 direction have been produced in strained Si1−xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high‐temperature anneal, misfit dislocation propagation from a series of parallel saw lines oriented along a particular 〈110〉 direction led to asymmetrically strained material demonstrating an orthorhombic symmetry. Processing conditions required to maximize [110]/[110] asymmetry in the strain distribution are discussed. The distance of a dislocation front emanating from the sites of crystallographic damage during a high‐temperature anneal has been used to measure the misfit dislocation glide velocity.
Databáze:	OpenAIRE
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