Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
| Autor: | L. Toikkanen, Mika Toivonen, Mihail Dumitrescu, S. Orsila, V. Vilokkinen, Mika J. Saarinen, P. Melanen, M. Pessa, Pekko Sipilä, Pekka Savolainen |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Resonant cavity Condensed Matter Physics Distributed Bragg reflector Transfer matrix Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics law Optoelectronics Power output Electrical and Electronic Engineering business Molecular beam epitaxy Diode Line (formation) Light-emitting diode |
| Zdroj: | Microelectronic Engineering. :449-460 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00496-7 |
| Popis: | Monolithic top emitting resonant cavity light-emitting diodes (RC-LEDs) operating at 660 and 880 nm have been prepared using solid-source molecular beam epitaxy (SSMBE) growth. Transfer matrix based modelling together with a self- consistent model have been used to optimise the devices' performances. Intermediate-composition barrier-reduction layers were introduced in the distributed Bragg reflector (DBR) mirrors for improving the I-V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and wall-plug efficiencies of 3% and 14.1% in the 660 nm and 880 nm ranges, respectively, while the simulations indicate significant performance improvement possibilities. © 2000 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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