Approaches for quantitative Auger electron spectroscopy of silicon after high dose nickel implantation

Autor:	H. Bubert, E. te Kaat, A. Schönborn
Rok vydání:	1991
Předmět:	Matrix (chemical analysis) Nickel Auger electron spectroscopy Range (particle radiation) Materials science Ion implantation chemistry Silicon Energy spectrum Analytical chemistry chemistry.chemical_element Biochemistry Line (formation)
Zdroj:	Fresenius' Journal of Analytical Chemistry. 341:241-244
ISSN:	1432-1130 0937-0633
DOI:	10.1007/bf00321555
Popis:	Silicon samples of well-known nickel content have been produced by ion implantation in the dose range from 1017 to 1018 Ni/cm2. Such implants are used for the comparison of different approaches for quantitative Auger electron analysis. Considerable differences are found between results obtained from peak-to-peak heights in the differentiated energy spectrum, neglecting composition-dependent changes of the line widths, and those results calculated with consideration of variations of the line widths. Matrix effects are taken into account by the inclusion of backscattering factors and escape depths. The results show that the elemental composition for the Ni/Si system cannot be accurately determined over the whole dose range. The discrepancies are attributed to sputter-induced composition changes or incorrect theoretical matrix factors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::954b9a17d038c8bd5ff7e8f66302c4f0 https://doi.org/10.1007/bf00321555 Zobrazit plný text záznamu Full text from SpringerLink