Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
| Autor: | Rudiger Quay, Erdin Ture, Ralf Granzner, Peter Brückner, Mohamed Alsharef, Oliver Ambacher, Frank Schwierz |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Transistor Gallium nitride Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Swing 021001 nanoscience & nanotechnology 01 natural sciences law.invention Threshold voltage chemistry.chemical_compound chemistry law Modulation Power electronics 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | 2016 11th European Microwave Integrated Circuits Conference (EuMIC). |
| DOI: | 10.1109/eumic.2016.7777489 |
| Popis: | This paper reports on the design and fabrication of enhancement-mode high-electron mobility transistors (HEMTs) in AlGaN/GaN FinFET technology with 100 nm of gate length (L g = 100 nm). Provided by the lateral as well as the vertical modulation of the fin-shaped channels, the threshold voltages of the designed transistors are made possible to be shifted toward the positive direction, enabling the enhancement-mode (E-mode) of operation. The fabricated FinFETs also exhibit highly-improved off-state performance with minimised short-channel effects (SCE) as a result of the enhanced gate control. A very high on/off current ratio of 108 and a sub-threshold swing of 75 mV/decade are recorded by the E-mode devices with a threshold voltage of +0.2 V, showing substantial potential for high speed logic, mixed-signal and power electronics applications. |
| Databáze: | OpenAIRE |
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