Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
| Autor: | Tomasz Sochacki, Aneta Sidor, M. Grabowski, R. Kisiel, Pawel Prystawko, J. Jasinski, Michal Bockowski, L. Lukasiak, P. Kruszewski, Mike Leszczynski |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Schottky diode Thermionic emission 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences Breakdown voltage Optoelectronics General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology business Diode |
| Zdroj: | Materials Science in Semiconductor Processing. 96:132-136 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2019.02.037 |
| Popis: | We report on electrical properties of vertical n-GaN high voltage Schottky diodes (SBDs) grown by two different techniques: Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) on highly-conductive n-type Ammono-GaN substrate. The thermionic emission (TE) current model has been applied for diodes parameters analysis. The fabricated SBDs exhibited a breakdown voltage of 670 V and 220 V, barrier height of 1.05 eV and 0.92 eV, ideality factor of 1.65 and 1.42 and series resistance of 440 Ω and 12 Ω for HVPE and MOCVD samples, respectively. Finally, we demonstrate preliminary point defects analysis for both types of the samples. |
| Databáze: | OpenAIRE |
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