Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT

Autor:	He Kang, Junda Yan, Shenqi Qu, Chun Feng, Hongling Xiao, Jiang Lijuan, Xun Hou, Cuimei Wang, Haibo Yin, Hong Chen, Xiaoliang Wang, Zhanguo Wang, Enchao Peng
Rok vydání:	2014
Předmět:	Materials science business.industry Transistor High voltage High-electron-mobility transistor Condensed Matter Physics Critical value Electronic Optical and Magnetic Materials law.invention Barrier layer law Electric field Optoelectronics business Instrumentation Layer (electronics) Voltage
Zdroj:	The European Physical Journal Applied Physics. 68:10105
ISSN:	1286-0050 1286-0042
Popis:	We present calculation of critical voltage for AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layer. The calculation includes mechanical stress and relaxable energy in the GaN/AlGaN barrier layer. Under high voltage conditions, the high electric field results in an increase in stored relaxable energy. If this exceeds a critical value, crystallographic defects are formed. This degra- dation mechanism is voltage driven and characterized by a critical voltage beyond which non-reversible degradation takes place. The dependence of the GaN cap layer's thickness on the critical voltage has been discussed. The calculated results indicate that thicker GaN cap layer results in higher critical voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::953f6de71fadee663648dbc47de65095 https://doi.org/10.1051/epjap/2014140019 Zobrazit plný text záznamu