Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires
| Autor: | Albert V. Davydov, Bharat Krishnan, J. Neil Merrett, Rooban Venkatesh K.G. Thirumalai, Yaroslav Koshka |
|---|---|
| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Crystal Growth & Design. 12:2221-2225 |
| ISSN: | 1528-7505 1528-7483 |
| Popis: | Several different growth directions of SiC nanowires (NWs) determined by the substrate surface crystallographic orientation were achieved by conducting vapor−liquid−solid growth on the top surfaces and the sidewalls of the 4H-SiC mesas. When substrate- dependent (i.e., epitaxial) growth was ensured, six possible crystallo- graphic orientations of 3C-SiC NW axis with respect to the 4H-SiC substrate were realized. They all were at 20° with respect to the substrate c plane, and their projections on the c plane corresponded to one of the six equivalent ⟨101⟩ crystallographic directions. All six orientations were obtained simultaneously when growing on the (0001) top surface of the 4H-SiC wafer or on the mesa tops. In contrast, no more than two NW orientations coexisted when grown on any particular crystallographic plane of a mesa sidewall. In particular, the {101 mesa sidewall plane resulted in only one NW orientation, thereby producing well-aligned NW arrays desirable for device applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|