Origin of localization in Ti-doped Si
| Autor: | Mark Jarrell, Unjong Yu, Wei Ku, Yi Zhang, N. S. Vidhyadhiraja, Ryky Nelson, Ka-Ming Tam, Tom Berlijn, Hanna Terletska, Juana Moreno |
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| Rok vydání: | 2018 |
| Předmět: |
Anderson localization
Materials science Condensed matter physics business.industry Doping Context (language use) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electron localization function Metal Semiconductor Impurity visual_art 0103 physical sciences visual_art.visual_art_medium Condensed Matter::Strongly Correlated Electrons Metal–insulator transition 010306 general physics 0210 nano-technology business |
| Zdroj: | Physical Review B. 98 |
| ISSN: | 2469-9969 2469-9950 |
| Popis: | Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells but only if the intermediate impurity band is metallic. We apply a recently developed first principles method to investigate the origin of electron localization in Ti doped Si, a promising candidate for intermediate band solar cells. We compute the critical Ti concentration and compare it against the available experimental data. Although Anderson localization is often overlooked in the context of intermediate band solar cells, our results show that in Ti doped Si it plays a more important role in the metal insulator transition than Mott localization. To this end we have devised a way to gauge the relative strengths of these two localization mechanisms that can be applied to study localization in doped semiconductors in general. Our findings have important implications for the theory of intermediate band solar cells. |
| Databáze: | OpenAIRE |
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