| Popis: |
The RF-driven ion source used in the ULE2 ion implanter has unique capabilities for producing high current beams of species important to silicon-on-insulator technology. Specifically, results are presented that demonstrate the capabilities of this ion source for producing beams of H/sup +/ and O/sup +/, important to SmartCut/sup TM/ and SIMOX technologies. Beam currents and atomic and molecular ion species distributions are presented as functions of source input power, feed gas flow rate, and source geometry over a wide range of operating parameters. Predictions taken from a volume-averaged model of the ion source plasma show good agreement with experimental results. In each case it is clear that delivered beam current can increase at least linearly with input power, and that significant improvements in performance are readily available using the existing ULE2 ion source. |
