Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
| Autor: | Yuanhu Zhu, Qing-Long Meng, Xinhe Bao, Zhiwei Huang, Heng-Chang Liu, Xiaowei Lu, Peng Jiang, Shuang Kong |
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| Rok vydání: | 2016 |
| Předmět: |
Analytical chemistry
02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Growth time 0104 chemical sciences Volumetric flow rate chemistry.chemical_compound chemistry Chemical engineering Monolayer General Materials Science Electrical and Electronic Engineering 0210 nano-technology Molybdenum disulfide |
| Zdroj: | Nano Research. 10:643-651 |
| ISSN: | 1998-0000 1998-0124 |
| DOI: | 10.1007/s12274-016-1323-3 |
| Popis: | Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time. |
| Databáze: | OpenAIRE |
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