Effect of Secondary Annealing on the Electrical Properties of Polysilicon Thin Films

Autor:	B. Chouial, H. Felfli, B. Hadjoudja, A. Chibani, A. Magramene, S. Gagui, B. Zaidi
Rok vydání:	2015
Předmět:	Polycrystalline silicon Materials science Electrical resistivity and conductivity Annealing (metallurgy) engineering Composite material engineering.material Thin film Free carrier Electronic Optical and Magnetic Materials
Zdroj:	Silicon. 7:293-295
ISSN:	1876-9918 1876-990X
Popis:	In this work, we study the electrical characteristics of polysilicon (resistivity, free carrier concentration and Hall mobility of carriers), depending on the annealing temperature of implantation for films of polycrystalline silicon having undergone a long heat treatment after implantation, and also the secondary annealing temperature (900-1100 ∘C) of longer periods. The results have shown that the longer periods of secondary annealing have permitted the improvement of electrical characteristics of our films (decrease of the resistivity, increase of the free carriers concentration and the carriers Hall mobility).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::951f726becfec574914721ccfb76082c https://doi.org/10.1007/s12633-015-9282-y Zobrazit plný text záznamu Full text from SpringerLink