Advanced 300mm 130nm BCD technology from 5V to 85V with Deep-Trench Isolation
| Autor: | Dong Ke, Michael Tiong, Raj Verma Purakh, Ong Shiang Yang, Liu Kun, Koo Jeoung Mo, Mun Nam Chil, Rajesh R. Nair |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Modularity (networks) business.industry 020208 electrical & electronic engineering Bipolar junction transistor Automotive industry Electrical engineering 02 engineering and technology 01 natural sciences Power (physics) law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Power semiconductor device Isolation (database systems) Resistor business Voltage |
| Zdroj: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2016.7520863 |
| Popis: | This paper demonstrates an advanced 300mm 130nm BCD (Bipolar-CMOS-DMOS) automotive grade platform with high modularity. The platform offers logic-devices, flash-devices and high performance power devices with rated voltages up to 85V as well as complimentary analog devices such as a BJT, MIM and Poly Resistor. The power devices in the process have best-in-class specific on-resistance and wide safe operating region. In addition, Deep-Trench Isolation (DTI) and highly doped n-buried layers are introduced to ensure much better immunity to parasitic coupling effects and isolation between sensitive devices and power stages. |
| Databáze: | OpenAIRE |
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