Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors

Autor:	F. Raoult, Boubekeur Tala-Ighil, G. Gautier, Y. Helen, Tayeb Mohammed-Brahim, Jean-François Llibre, K. Mourgues, H. Toutah
Rok vydání:	2001
Předmět:	Materials science Reliability (semiconductor) Thin-film transistor Polysilicon depletion effect General Materials Science Composite material Condensed Matter Physics Atomic and Molecular Physics and Optics Grain size
Zdroj:	Solid State Phenomena. :343-348
ISSN:	1662-9779
DOI:	10.4028/www.scientific.net/ssp.80-81.343
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::94f615332cee05967732fe80a3c5733f https://doi.org/10.4028/www.scientific.net/ssp.80-81.343 Zobrazit plný text záznamu