Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates
| Autor: | Bau-Ming Wang, YewChung Sermon Wu, Cheng-Yu Hsieh, Nancy Chang, Bo-Wen Lin, Hsin-Ju Cho |
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| Rok vydání: | 2012 |
| Předmět: |
Photoluminescence
Materials science business.industry Scanning electron microscope Cathodoluminescence Gallium nitride Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon on sapphire Sapphire Optoelectronics Electrical and Electronic Engineering business Quantum well |
| Zdroj: | IEEE Photonics Technology Letters. 24:2232-2234 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2012.2224855 |
| Popis: | A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces. |
| Databáze: | OpenAIRE |
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