Effects of the TaNx interface layer on doped tantalum oxide high-k films

Autor:	Yue Kuo, Jun-Yen Tewg, Jun Lu, B. Schueler
Rok vydání:	2004
Předmět:	Materials science Annealing (metallurgy) Doping Analytical chemistry Dielectric Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound X-ray photoelectron spectroscopy Tantalum nitride chemistry Wafer Thin film Instrumentation High-κ dielectric
Zdroj:	Vacuum. 74:539-547
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2004.01.025
Popis:	A 5 A tantalum nitride (TaN x ) thin film was deposited between the Hf- or Zr-doped TaO x high dielectric constant (high- k ) film and silicon wafer to hinder the formation of the SiO x interface layer during the subsequent high-temperature annealing step. This interface contributes to the lower leakage current density, higher dielectric constant, and larger charge trapping. The improvement is attributed to the formation of the TaO x N y interfacial layer, which was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::94d654ded7c862685054a44a2192cae7 https://doi.org/10.1016/j.vacuum.2004.01.025 Zobrazit plný text záznamu Full Text from ScienceDirect