| Autor: |
C.C. Shen, Larry R. Hite, Gordon P. Pollack, E. Yee, Jeong-Mo Hwang, R. Rajgopal, H. Lu, L. Cohn, Theodore W. Houston |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Workshop Record. 1994 IEEE Radiation Effects Data Workshop. |
| DOI: |
10.1109/redw.1994.633028 |
| Popis: |
SOI technology and design combine to give a high performance radiation hardened 1M SRAM manufacturable at the 0.8 /spl mu/m technology node. Features include a nominal 23 ns access time and a worst case minimum Write pulse of less than 15 ns, along with total dose and transient dose hardness, resistance to single event upset, and latch-up immunity. Detailed characterization results are presented in this paper. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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