23.5 A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from −55°C to 125°C

Autor: Zhong Tang, Sining Pan, Kofi A. A. Makinwa
Rok vydání: 2023
Zdroj: 2023 IEEE International Solid- State Circuits Conference (ISSCC).
DOI: 10.1109/isscc42615.2023.10067695
Databáze: OpenAIRE