Growth morphology and structure of bismuth thin films on GaSb(110)
| Autor: | T. van Gemmeren, Oliver Bunk, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l, L. Lottermoser, Gerald Falkenberg |
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| Rok vydání: | 1998 |
| Předmět: |
Thin layers
Materials science chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films law.invention Bismuth Crystallography Electron diffraction X-ray photoelectron spectroscopy chemistry law Monolayer Materials Chemistry Scanning tunneling microscope Surface reconstruction |
| Zdroj: | Surface Science. 414:254-260 |
| ISSN: | 0039-6028 |
| Popis: | Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1×1)-reconstruction is formed at a coverage of one monolayer. A structural model derived from X-ray diffraction data is presented for this phase. The (1×1)-phase consists of zigzag chains of bismuth atoms bonded alternately to the surface cations and anions of the bulk-terminated unrelaxed (110) surface. We propose that the (1×1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III–V compound semiconductors are also described by the epitaxial continued layer model. |
| Databáze: | OpenAIRE |
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