In situ STM observations of step structures in a trench around an InAs QD at 300°C
Autor: | T. Otsu, M. Kurisaka, D. Wakamatsu, Takashi Toujyou, Tomoya Konishi, Shiro Tsukamoto |
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Rok vydání: | 2013 |
Předmět: | |
Zdroj: | Journal of Crystal Growth. 378:44-46 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2012.12.075 |
Popis: | We successfully confirmed unique atomic structures in a trench around an InAs quantum dot (QD) at 300 °C. The trench structure was consisted by various atomic steps which included 4× structures (InAs (4×2) and/or GaAs (4×6)) at an upper terrace edge next to a step. As distant from the upper terrace edge, frequency of 4× structures decreased and gradually converged to 2× structures (InAs (2×4), InAs (2×3), and GaAs (2×4)). |
Databáze: | OpenAIRE |
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