In situ STM observations of step structures in a trench around an InAs QD at 300°C

Autor: T. Otsu, M. Kurisaka, D. Wakamatsu, Takashi Toujyou, Tomoya Konishi, Shiro Tsukamoto
Rok vydání: 2013
Předmět:
Zdroj: Journal of Crystal Growth. 378:44-46
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.075
Popis: We successfully confirmed unique atomic structures in a trench around an InAs quantum dot (QD) at 300 °C. The trench structure was consisted by various atomic steps which included 4× structures (InAs (4×2) and/or GaAs (4×6)) at an upper terrace edge next to a step. As distant from the upper terrace edge, frequency of 4× structures decreased and gradually converged to 2× structures (InAs (2×4), InAs (2×3), and GaAs (2×4)).
Databáze: OpenAIRE