Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy

Autor:	Wen Hsiung Chen, C. I. Chiang, Yung Chung Pan, Ming Chih Lee, Chia Chou Tsai, C. H. Lin, H. M. Chung, W. C. Chuang, Wei-Kuo Chen, H. Chang
Rok vydání:	2000
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Doping Wide-bandgap semiconductor Schottky diode chemistry.chemical_element Chemical vapor deposition Epitaxy chemistry Saturation current Optoelectronics Orders of magnitude (data) business Indium
Zdroj:	Applied Physics Letters. 76:897-899
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.125622
Popis:	Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount of In atoms was introduced into the epilayer, the ideality factor of n-GaN Schottky diode was improved from 1.20 to 1.06, and its calculated saturation current could be reduced by 2 orders of magnitude as compared to that of the undoped sample. Moreover, it is interesting to note that In isodoping can effectively suppress the formation of deep levels at 0.149 and 0.601 eV below the conduction band, with the 0.149 eV trap concentration even reduced to an undetected level. Our result indicates that the isoelectronic In-doping technique is a viable way to improve the GaN film quality.
Databáze:	OpenAIRE
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