Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors
| Autor: | N. D. Zhukov, M. I. Shishkin, A. G. Rokakh |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed Matter::Other business.industry Band gap Diamond 02 engineering and technology Electron engineering.material Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science Semiconductor Absorption edge Absorption band Quantum dot 0103 physical sciences engineering Optoelectronics 0210 nano-technology Absorption (electromagnetic radiation) business |
| Zdroj: | Technical Physics Letters. 44:362-365 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785018040284 |
| Popis: | Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots. |
| Databáze: | OpenAIRE |
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