Epitaxial ternary RexMo1−xSi2thin films on Si(100)

Autor:	Robert G. Long, John E. Mahan, André Vantomme, Marc-A. Nicolet
Rok vydání:	1994
Předmět:	Thin layers Materials science Silicon Inorganic chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Epitaxy Crystallography chemistry.chemical_compound chemistry Silicide Thin film Ternary operation Chemical composition
Zdroj:	Journal of Applied Physics. 75:3924-3927
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.356038
Popis:	Reactive deposition epitaxy was used to synthesize thin layers of RexMo1−xSi2 on Si(100). In the case of x=1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.‐A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of the MoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.
Databáze:	OpenAIRE
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