Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane

Autor:	Henry J. H. Chen, Tzu Nien Lee, Shin-Lun Tseng, Sun-Zen Chen, Po-Wen Chiu
Rok vydání:	2022
Předmět:	Renewable Energy Sustainability and the Environment Materials Chemistry Electrochemistry Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of The Electrochemical Society. 169:037511
ISSN:	1945-7111 0013-4651
DOI:	10.1149/1945-7111/ac5ad9
Popis:	In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2 were investigated. Si wires were fabricated by nanoimprint lithography and Si anisotropic/isotropic reactive-ion etching processes. The Si wires, with a line width of ∼200 nm, were undercut and nearly suspended, which formed an Ω -shape cross-section. The aspects of wires were investigated using an optical microscope, an atomic force microscope, a scanning electron microscope, and a transmission electron microscope. The sensitivity, hysteresis, and drift of ISFETs were investigated. The above sensing properties were all significantly improved with the proposed channels and the sensing membrane stacks. As such, high-performance ISFETs can be realized for future biochemical applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9472c4d124c482b0d4d7554f33d8938b https://doi.org/10.1149/1945-7111/ac5ad9 Zobrazit plný text záznamu