Raman Spectroscopic Study of the Crystallization of Intrinsic Amorphous Silicon Thin Films with a 488 nm Continuouswave Laser
| Autor: | 陈俊领 Chen Junling, 黄明举 Huang Mingju, 段国平 Duan Guoping, 韩俊鹤 Han Junhe |
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| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science Silicon business.industry Nanocrystalline silicon chemistry.chemical_element engineering.material Atomic and Molecular Physics and Optics Amorphous solid chemistry.chemical_compound Polycrystalline silicon chemistry Plasma-enhanced chemical vapor deposition engineering Optoelectronics Laser power scaling business Power density |
| Zdroj: | ACTA PHOTONICA SINICA. 40:1657-1661 |
| ISSN: | 1004-4213 |
| Popis: | Intrinsic amorphous silicon thin films were prepared by plasma enhanced chemical vapor deposition method,and the crystallization of the films by 488 nm and 514 nm continuous-wave laser under different power densities and irradiation time were studied by micro-Raman spectroscopic measurements.It is shown that intrinsic amorphous silicon films are able to be crystallized within 60 s at laser power densities is above 1.575×105 W/cm2.When the power density reaches to 2.756×105 W/cm2,there is transformation from amorphous silicon to single-crystalline silicon.With the increase of the laser power density,it is still single-crystalline silicon.At the laser power density of 2.362 ×105 W/cm,60 s irradiation time crystallized the effect is better;and at the power density of 2.756×105 W/cm2,the effect of crystallization with 488 nm wavelength is better than that of with 514 nm in 60 s,and they are all single-crystalline silicon. |
| Databáze: | OpenAIRE |
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