Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory
| Autor: | Bongmook Lee, Veena Misra, Narayanan Ramanan |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 106:243503 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4922799 |
| Popis: | Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps with a variety of ALD dielectrics. High-k dielectrics (HfO2, HfAlO, and Al2O3) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO2 shows the lowest interface trap density ( |
| Databáze: | OpenAIRE |
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