Preparation of PbTe Thin Films for High-Sensitive Mid-IR Photodetectors by PECVD
| Autor: | Nikolay Starostin, Sergey Zelentsov, Alexander Logunov, Aleksey Letnianchik, Tatiana Sazanova, Aleksander Knyazev, Leonid Mochalov, Edik U. Rafailov, Vladimir M. Vorotyntsev, Igor Prokhorov |
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| Rok vydání: | 2020 |
| Předmět: |
Argon
Materials science business.industry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Thermoelectric materials 01 natural sciences 0104 chemical sciences Lead telluride chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Thermoelectric effect Optoelectronics Thin film 0210 nano-technology Tellurium business |
| Zdroj: | ICTON |
| Popis: | Lead telluride (PbTe) possesses a good performance as a thermoelectric material due to both a low thermal conductivity and its electrical properties. It has peak thermoelectric characteristics at high temperature and is widely used in spacecraft power applications and as a waveguide-integrated detector monolithically integrated on a silicon substrate and operating at room temperature. In this work PbTe thin films were prepared via direct plasma-chemical interaction of lead and tellurium vapors. Argon of high purity was also used as a career gas for precursors transport to the plasma zone and as a plasma feed gas. The process was carried out at the low pressure (0.01 Torr) in inductively coupled non-equilibrium RF (40.68 MHz) plasma discharge. Optical emission spectroscopy (OES) was used to identify the exited species and to assume the possible mechanisms of plasma-chemical reactions. The stoichiometry, structure and morphology of the surface of the materials obtained was also studied by deferent analytical techniques dependently on the conditions of the plasma process. |
| Databáze: | OpenAIRE |
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