A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
| Autor: | Hiroki Yamashita, Hideo Sunami, Tomoyasu Furukawa |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Vertical channel
Materials science Physics and Astronomy (miscellaneous) biology business.industry Transistor General Engineering General Physics and Astronomy Nanotechnology Surface finish biology.organism_classification Aspect ratio (image) law.invention Etching (microfabrication) law Optoelectronics Tetra Dry etching business Communication channel |
| Zdroj: | Japanese Journal of Applied Physics. 42:2067-2072 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | In this study, a three-dimensional (3-D) transistor with 1-µm-high multi-beams is proposed. This is named corrugated-channel transistor (CCT) after its "corrugated structure of channels". To realize the corrugated structure, an orientation dependent etching (ODE) of tetra methyl ammonium hydroxide (TMAH) is used. Considering its etching mechanism, the roughness of the vertical channel region is expected to be much smaller and a higher channel aspect ratio has been realized compared with those in the case of conventional dry etching. Utilizing this TMAH etching, CCT having a comb-shaped channel has been successfully developed featuring strongly area-efficient performance. |
| Databáze: | OpenAIRE |
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