0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess
| Autor: | P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry Amplifier Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Integrated circuit Chemical vapor deposition 01 natural sciences Electronic Optical and Magnetic Materials law.invention Atomic layer deposition law Plasma-enhanced chemical vapor deposition Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 63:3076-3083 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2579160 |
| Popis: | We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enhanced chemical vapor deposition (PECVD) SiN, have also been assessed in terms of dc, pulsed- $IV$ , and high-frequency characteristics. It has been found that while PECVD SiN-passivated HEMTs and the monolithic microwave integrated circuits slightly underperform their ALD Al2O3-passivated counterparts, their MMW power performance can be further boosted with the gate recess due to the improved aspect ratio and scaling characteristics. When biased at a drain voltage of 10 V, a first-pass two-stage power amplifier design based on recessed PECVD SiN-passivated 0.1- $\mu \text{m}$ depletion-mode devices has demonstrated an output power of 1.63 W with a 15% power-added efficiency at 86 GHz. |
| Databáze: | OpenAIRE |
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