| Popis: |
Graphene is known for its high carrier mobility and high saturation velocity [1–3]. The majority of graphene transistors in the literature—including MOSFETs, barristors, and tunneling FETs—have a gate separated from the channel by a conventional or high-K dielectric layer [4–6]. In this paper we demonstrate for the first time a lateral graphene FET gated by a graphene/semiconductor heterojunction. The device consists of a p-type graphene channel and an n-type semiconductor gate. Since no metal/dielectric-stacked gate is used, the device is referred to as graphene junction FET (G-JFET). Such a device is of interest as an alternate to G-MOSFETs, or as a back gate for G-MOSFETs with the feature that the device's Dirac voltage (V Dirac ) can be tuned by the doping density of semiconductor gate. |
