Enhanced fTand fMAXSiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier

Autor:	Hyun-Cheol Bae, Seung-Hyeub Oh
Rok vydání:	2008
Předmět:	Power gain Engineering business.industry Amplifier Electrical engineering BiCMOS Inductor Electronic Optical and Magnetic Materials law.invention Capacitor law Electrical and Electronic Engineering Wideband Resistor business Electronic circuit
Zdroj:	JSTS:Journal of Semiconductor Technology and Science. 8:232-238
ISSN:	1598-1657
DOI:	10.5573/jsts.2008.8.3.232
Popis:	In this paper, a wideband power efficient 2.2 ㎓ - 4.9 ㎓ Medium Power Amplifier (MPA) has been designed and fabricated using 0.8 ㎛ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulatormetal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1㏈ of 17.7 ㏈m has been measured with a power gain of 8.7 dB at 3.4 ㎓ with a total current consumption of 30 ㎃ from a 3 V supply voltage at 25 ℃. The measured 3 ㏈ bandwidth is 2.7 ㎓ and the maximum Power Added Efficiency (PAE) is 41%, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of 1.7 ㎜ × 0.8 ㎜.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9424dde818b5cb513012be9d5ca99e66 https://doi.org/10.5573/jsts.2008.8.3.232 Zobrazit plný text záznamu