MOVPE growth for an integrated PIN-HBT receiver using Zn-doped p+-InGaAs layers
| Autor: | A. Eisenbach, K. Mause, E. Kuphal, A. Goldhorn |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Fabrication business.industry Heterojunction bipolar transistor Bipolar junction transistor Mineralogy Binary compound Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Condensed Matter Physics Epitaxy law.invention Inorganic Chemistry chemistry.chemical_compound chemistry Ternary compound law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy business |
| Zdroj: | Journal of Crystal Growth. 170:451-455 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(96)00646-x |
| Popis: | Technological problems, requirements, and solutions for a PIN-HBT photoreceiver are investigated. MOVPE growth of the different layer structures for PIN-diodes and SHBTs require compromises to obtain the best performances of the devices within the integrated circuit. Growth and device technology are investigated and solutions for the integration are given using LP-MOVPE for growing the epitaxial layers for PIN-diodes and HBTs, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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