SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
| Autor: | Peter Almern Losee, Reza Ghandi, Stacey Kennerly, Rajib Datta, Alexander Viktorovich Bolotnikov, Xu She |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Charge (physics) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science Limit (mathematics) 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 963:655-659 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.963.655 |
| Popis: | This work presents experimental validation of novel device design, based on charge-balance concept expected to expand SiC utilization space for industrial and transportation power conversion applications. Fabricated 2kV and 3kV SiC CB-JBS diodes have surpassed the 1-D BV versus ROn,sp tradeoff with the highest reported breakdown voltage. Static and dynamic characteristics of these new diodes are reported. |
| Databáze: | OpenAIRE |
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