Oxygen ion-beam etch resistance of metal-free and organosilicon resist materials
| Autor: | Yoshitake Ohnishi, Kazuhide Saigo, Hiroshi Gokan |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
inorganic chemicals
Materials science Silicon Inorganic chemistry technology industry and agriculture chemistry.chemical_element Condensed Matter Physics Ion gun Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Resist Sputtering Etching (microfabrication) Electrical and Electronic Engineering Carbon Organosilicon |
| Zdroj: | Microelectronic Engineering. 1:251-262 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(83)90015-1 |
| Popis: | Oxygen ion-beam etch resistance of metal-free and organosilicon resist materials has been studied, using an etching system with a Kaufman ion gun. The etch rate for metal-free resist materials is inversely proportional to the number of effective carbon atoms in a material. The effective term means subtracting the number of oxygen atoms from that of carbon atoms. This result suggests that the etch-rate determining step is the sputtering of carbon atoms which are not bonded to oxygen atoms. Carbon atoms bonded to oxygen atoms, for example >C=O or ⪰C-O-, may spontaneously desorb to form a volatile product CO under ion bombardment. The etch-rate ratio of an organosilicon resist material P(SiSt-CMS) to AZ1350J markedly increases with decreasing acceleration energy. This is because the rate determining step for an organosilicon resist material is mainly due to the sputtering of silicon atoms in the polymer. This is supported by the fact that the etch rate of an organosilicon resist material increases with increasing beam angle, while that of metal-free resist material monotonically decreases with increasing beam angle. |
| Databáze: | OpenAIRE |
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