Finite element simulation of ion-beam lithography mask fabrication
| Autor: | Roxann L. Engelstad, R. Tejeda, Hans Loschner, Edward G. Lovell, Gary A. Frisque, Ernst Haugeneder |
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| Rok vydání: | 1999 |
| Předmět: |
Fabrication
Computer science Condensed Matter Physics Ion beam lithography Stencil Atomic and Molecular Physics and Optics Finite element method Surfaces Coatings and Films Electronic Optical and Magnetic Materials Finite element simulation Distortion Electronic engineering Electrical and Electronic Engineering Projection (set theory) Lithography |
| Zdroj: | Microelectronic Engineering. 46:485-488 |
| ISSN: | 0167-9317 |
| Popis: | Fabrication of low distortion stencil masks is one of the key issues for ion-beam projection lithography (IPL). Identifying the sources of distortion and optimizing the processing techniques are essentical to meet the stringent error budgets. Since experiments are time consuming and expensive, it is desirable to develop accurate simulation procedures which can be used for analysis and design. This paper presents results to show that finite element analysis is a viable alternative. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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