Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping
| Autor: | Jae Kyeong Jeong, Joohei Lee, Cheol Seong Hwang, Kap-Soo Yoon, Hyeong Joon Kim, Bong Seop Yang, Seung Ha Oh, Myung Soo Huh |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry General Chemical Engineering Doping Transistor chemistry.chemical_element Trapping Tin oxide law.invention Threshold voltage chemistry Impurity Aluminium Thin-film transistor law Electrochemistry Optoelectronics General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry business |
| Zdroj: | Electrochemical and Solid-State Letters. 12:H385 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.3194251 |
| Popis: | Thin-film transistors (TFTs) were fabricated with an aluminum oxide-doped tin oxide (SAO) channel, deposited by cosputtering SnO 2 and Al 2 O 3 targets. The effect of the Al 2 O 3 content on the device performance of the SnO x -based TFTs was investigated. The TFTs with a nondoped SnO x channel did not show a promising performance. However, the field-effect mobility and threshold voltage of the SAO TFTs with an Al concentration of about 0.9 atom % were improved to ~3.8 cm 2 /V s and ~0.6 V, respectively. This improved device performance was attributed to the greatly reduced carrier concentration induced by the carrier trapping at the Al impurity sites. |
| Databáze: | OpenAIRE |
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