PAC investigations of the shallow donor environment in GaAs

Autor:	H. Knauf, Reiner Vianden, E. Lohmann, Th. Schaefer, Kristian Freitag
Rok vydání:	1992
Předmět:	Nuclear and High Energy Physics Materials science Annealing (metallurgy) Angular correlation Lattice (order) education Rapid thermal annealing Instrumentation Molecular physics Shallow donor
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 63:227-230
ISSN:	0168-583X
DOI:	10.1016/0168-583x(92)95201-2
Popis:	The γ-γ angular correlation technique (PAC) was employed to study the activation process of the shallow donor Se in GaAs. Therefore the PAC probe 73Se was implanted in the GaAs lattice with energies of 60 and ∼ 150 keV. The environment of the shallow donor Se was observed in dependence of several implant doses and rapid thermal annealing (RTA) temperatures. The results are discussed in comparison with Hall-effect measurements. Evidence is found that the donor-defect complexes, remaining after the activation process, are mainly acceptors compensating the shallow donor Se. However, after annealing above 980 ° C they show neutral behaviour.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::940975e9ff8a8b93c68088110b296544 https://doi.org/10.1016/0168-583x(92)95201-2 Zobrazit plný text záznamu